FEATURES OF CREATING HIGH-SENSITIVITY PHOTOSENSORS BASED ON COMPENSATED SILICON

Authors

  • Sadullaev Alaviddin Bobakulovich Author
  • Umirov Asror Pardaevich Author
  • Nabiyeva Iroda Islom kizi Author

Keywords:

Highly compensated silicon; photoelectric properties; thermal diffusion; photodetectors; resistivity

Abstract

The photoelectric properties of highly compensated silicon were studied in the temperature range of 77–270 K. Samples with resistivity of 10²–2 × 10⁵ Ω·cm were obtained using thermal diffusion. The results demonstrate the potential for developing highly sensitive photodetectors for natural white light.

References

1. A.B. Sa'dullaev. Features of complex formation between impurity atoms of manganese and oxygen in silicon. A young scientist. No. 12, 2014, pp. 50-52.

2. Zikrillaev N.F., Sadullaev A.B. Power spectra of impurity in semiconductors in the condition of strong compensation. //SSP-2004. 8-th International Conference SOLED STATE PHYSICS, August 23-26, 2004, Almaty, Kazakhstan Abstracts Almaty-2004, pp-254-255.

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Published

2026-04-30

Issue

Vol. 4 No. 45 (2026): SCIENTIFIC ASPECTS AND TRENDS IN THE FIELD OF SCIENTIFIC RESEARCH

Section

Articles